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ST631K

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ST631K

TRANS PNP 120V 1A SOT32-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics ST631K is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter breakdown voltage (Vceo) of 120V and a continuous collector current (Ic) capability of 1A, with a maximum power dissipation of 12.5W. The device exhibits a minimum DC current gain (hFE) of 120 at 100mA and 5V. The saturation voltage (Vce(sat)) is specified at 500mV maximum for a base current (Ib) of 50mA and collector current (Ic) of 500mA. This component is supplied in a SOT-32-3 package, corresponding to the TO-225AA or TO-126-3 footprint, and is available in tube packaging. The STMicroelectronics ST631K is suitable for use in power switching, linear regulation, and general-purpose amplification circuits within industrial and consumer electronics. The collector cutoff current (Icbo) is a maximum of 1µA, and it operates at an extended junction temperature of up to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageSOT-32-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max12.5 W

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