ST600K
TRANS NPN 120V 1A SOT32-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics ST600K is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 1A, with a maximum power dissipation of 12.5W. The transistor exhibits a minimum DC current gain (hFE) of 120 at 100mA and 5V. Its saturation voltage (Vce(sat)) is rated at a maximum of 500mV at 50mA base current and 500mA collector current. The ST600K operates across an extended temperature range up to 150°C (TJ). Packaged in a SOT-32-3 format, suitable for through-hole mounting, this device is commonly utilized in power switching and amplification circuits within industrial control systems and general-purpose electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-32-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 12.5 W |
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