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ST2310DHI

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ST2310DHI

TRANS NPN 600V 12A ISOWATT-218

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics ST2310DHI is an NPN bipolar junction transistor designed for high-voltage applications. This device features a maximum collector-emitter breakdown voltage of 600V and a continuous collector current rating of 12A, with a maximum power dissipation of 55W. The DC current gain (hFE) is a minimum of 5.5 at 7A collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at a maximum of 3V for a collector current of 7A and a base current of 1.75A. It has a collector cutoff current of 1mA. The ST2310DHI is offered in an ISOWATT-218 package, suitable for through-hole mounting, and operates at junction temperatures up to 150°C. This component is commonly utilized in power switching and amplification circuits within industrial and consumer electronics, including power supplies and motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseISOWATT-218-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 1.75A, 7A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce5.5 @ 7A, 5V
Frequency - Transition-
Supplier Device PackageISOWATT-218
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max55 W

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