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ST1802HI

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ST1802HI

TRANS NPN 600V 10A ISOWATT-218

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics ST1802HI is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component offers a collector-emitter breakdown voltage of 600 V and a continuous collector current capability of 10 A, with a maximum power dissipation of 50 W. The ST1802HI features a saturation voltage of 5 V at 800 mA base current and 4 A collector current, and a minimum DC current gain (hFE) of 4 at 5 A collector current and 5 V collector-emitter voltage. It is housed in an ISOWATT-218 package, facilitating efficient heat dissipation. This transistor is suitable for power switching and amplification in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseISOWATT-218-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic5V @ 800mA, 4A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce4 @ 5A, 5V
Frequency - Transition-
Supplier Device PackageISOWATT-218
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max50 W

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