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ST13003N

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ST13003N

TRANS NPN 400V 1A SOT32-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

The STMicroelectronics ST13003N is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 400V and a continuous collector current capability of 1A, with a maximum power dissipation of 20W. Featuring a minimum DC current gain (hFE) of 5 at 1A and 10V, and a saturation voltage (Vce(sat)) of 1.2V at 330mA and 1A, the ST13003N is suitable for power switching and amplification circuits. Its through-hole mounting and SOT-32-3 (TO-225AA, TO-126-3) package facilitate integration into various electronic designs. This transistor is commonly employed in power supply units, lighting ballasts, and general-purpose switching applications. The operating junction temperature range is up to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bag
Technical Details:
PackagingBag
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 330mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 1A, 10V
Frequency - Transition-
Supplier Device PackageSOT-32-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max20 W

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