ST13003N
TRANS NPN 400V 1A SOT32-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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The STMicroelectronics ST13003N is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 400V and a continuous collector current capability of 1A, with a maximum power dissipation of 20W. Featuring a minimum DC current gain (hFE) of 5 at 1A and 10V, and a saturation voltage (Vce(sat)) of 1.2V at 330mA and 1A, the ST13003N is suitable for power switching and amplification circuits. Its through-hole mounting and SOT-32-3 (TO-225AA, TO-126-3) package facilitate integration into various electronic designs. This transistor is commonly employed in power supply units, lighting ballasts, and general-purpose switching applications. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 330mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 1A, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-32-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 20 W |
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