SO642
TRANS NPN 300V 0.1A SOT23-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics SO642 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a 300V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic(max)) of 100mA, with a typical saturation voltage (Vce(sat)) of 500mV at 2mA base current and 20mA collector current. The transistor features a transition frequency (fT) of 50MHz and a maximum power dissipation of 310mW. The DC current gain (hFE) is a minimum of 40 at 30mA collector current and 10V collector-emitter voltage. It is supplied in a SOT-23-3 package, presented on tape and reel. The SO642 is suitable for use in general-purpose amplification and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 310 mW |
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