SGSD200
TRANS PNP DARL 80V 25A TO247-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics SGSD200 is a PNP Darlington bipolar junction transistor (BJT) designed for high-power switching applications. This component features a maximum collector-emitter breakdown voltage (Vce) of 80V and can handle a continuous collector current (Ic) of up to 25A, with a maximum power dissipation of 130W. The device exhibits a high DC current gain (hFE) of a minimum 500 at 10A and 3V, and a Vce saturation of 3.5V at 80mA and 20A. It is packaged in a TO-247-3 through-hole configuration. The SGSD200 is commonly employed in power supply units, motor control circuits, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 80mA, 20A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-247-3 |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 130 W |
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