SGSD100
TRANS NPN DARL 80V 25A TO247-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics SGSD100 is an NPN Darlington bipolar transistor with a 80V collector-emitter breakdown voltage. This device is rated for a continuous collector current of 25A and a maximum power dissipation of 130W. Featuring a minimum DC current gain (hFE) of 500 at 10A and 3V, the SGSD100 offers high amplification capabilities. The saturation voltage (Vce(sat)) is a maximum of 3.5V at 80mA base current and 20A collector current. The transistor is housed in a TO-247-3 package, suitable for through-hole mounting. This component is commonly utilized in power switching applications within industrial automation and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 80mA, 20A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-247-3 |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 130 W |
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