S2000AF
TRANS NPN 700V 8A TO3PFManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics S2000AF is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power switching applications. This component offers a maximum collector-emitter breakdown voltage of 700 V and a continuous collector current rating of 8 A, with a maximum power dissipation of 50 W. The S2000AF features a minimum DC current gain (hFE) of 4.5 at 4.5 A collector current and 5 V collector-emitter voltage. Collector saturation voltage (Vce(sat)) is specified at 5 V maximum for a base current of 1 A and collector current of 4.5 A. The transistor is housed in a TO-3PF package, facilitating through-hole mounting. Its operating junction temperature range extends to 150°C. The S2000AF is commonly employed in power supply units, industrial motor control, and lighting ballast circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 1A, 4.5A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4.5 @ 4.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3PF |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
| Power - Max | 50 W |
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