MJE802
TRANS NPN DARL 80V 4A SOT32Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics MJE802 is an NPN Darlington bipolar transistor designed for power switching applications. This component features a maximum collector current (Ic) of 4A and a collector-emitter breakdown voltage (Vce) of 80V. The device exhibits a minimum DC current gain (hFE) of 750 at 1.5A and 3V. With a maximum power dissipation of 40W and an operating junction temperature of 150°C, this transistor is suitable for demanding industrial environments. The MJE802 is housed in a TO-225AA (TO-126-3) package, also referred to as SOT-32, and is supplied in tube packaging. Its saturated voltage (Vce Sat) is a maximum of 3V at 40mA base current and 4A collector current. This component finds application in power supplies, voltage regulators, and general-purpose amplification and switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-32 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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