MJE172
TRANS PNP 80V 3A SOT32-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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The STMicroelectronics MJE172 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector current rating of 3A and a collector-emitter breakdown voltage of 80V. With a transition frequency of 50MHz and a maximum power dissipation of 12.5W, it offers robust performance. The DC current gain (hFE) is a minimum of 50 at 100mA and 1V. Key parameters include a Vce(sat) of 1.7V at 600mA and 3A, and a collector cutoff current (ICBO) of 100nA. The device operates at junction temperatures up to 150°C and is supplied in a SOT-32-3 package (TO-225AA, TO-126-3). This transistor is commonly utilized in power supply circuits, audio amplifiers, and general switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-32-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 12.5 W |
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