MJD50T4
TRANS NPN 400V 1A DPAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics MJD50T4 is a high-voltage NPN bipolar junction transistor designed for demanding applications. This component offers a 400V collector-emitter breakdown voltage and a continuous collector current rating of 1A, making it suitable for power switching and amplification tasks. With a power dissipation of 15W and a transition frequency of 10MHz, it provides efficient operation. The transistor type is NPN, and its DC current gain (hFE) is a minimum of 30 at 300mA and 10V. The saturation voltage (Vce Sat) is a maximum of 1V at 200mA and 1A. Its low collector cutoff current is 100µA (max). The MJD50T4 is packaged in a TO-252-3, DPAK (SC-63) surface mount configuration, designed for automated assembly. It operates reliably in ambient temperatures up to 150°C (TJ). This device finds application in power supplies, lighting control, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 15 W |
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