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MJD32C

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MJD32C

TRANS PNP 100V 3A DPAK

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics MJD32C is a PNP bipolar junction transistor designed for power switching and amplification applications. This component offers a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 3A. With a power dissipation of 15W, it is suitable for demanding power management tasks. The device features a typical DC current gain (hFE) of 10 at 3A collector current and 4V collector-emitter voltage. The MJD32C is packaged in a surface-mount DPAK (TO-252-3) for efficient thermal management and board space optimization. Its operating temperature range extends to 150°C (TJ). This transistor finds application in areas such as power supplies, motor control, and general-purpose switching circuits within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A, 4V
Frequency - Transition-
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max15 W

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