MJD32C
TRANS PNP 100V 3A DPAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics MJD32C is a PNP bipolar junction transistor designed for power switching and amplification applications. This component offers a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 3A. With a power dissipation of 15W, it is suitable for demanding power management tasks. The device features a typical DC current gain (hFE) of 10 at 3A collector current and 4V collector-emitter voltage. The MJD32C is packaged in a surface-mount DPAK (TO-252-3) for efficient thermal management and board space optimization. Its operating temperature range extends to 150°C (TJ). This transistor finds application in areas such as power supplies, motor control, and general-purpose switching circuits within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 15 W |
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