MJD31C
TRANS NPN 100V 3A DPAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics MJD31C is an NPN bipolar junction transistor designed for robust performance in demanding applications. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of up to 3A, with a maximum power dissipation of 15W. It features a low saturation voltage of 1.2V at 3A collector current (with 375mA base current) and a minimum DC current gain of 10 at 3A. The MJD31C is housed in a surface-mount DPAK (TO-252-3) package, facilitating efficient board assembly and thermal management. Its operating temperature range extends up to 150°C (TJ). This transistor is commonly employed in power supply regulation, switching circuits, and general-purpose amplification across various industrial and consumer electronics sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 15 W |
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