MJB44H11T4
TRANS NPN 80V 10A D2PAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics MJB44H11T4 is an NPN bipolar junction transistor designed for robust power applications. This component features a 80V collector-emitter breakdown voltage and a continuous collector current capability of 10A. With a maximum power dissipation of 50W and a low saturation voltage of 1V at 400mA/8A, it is suitable for demanding switching and amplification tasks. The DC current gain (hFE) is a minimum of 40 at 4A and 1V. This transistor is housed in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package, supplied on tape and reel. Its operating temperature reaches up to 150°C (TJ). The MJB44H11T4 finds utility in various industrial sectors including power supplies, motor control, and general high-power switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | D2PAK |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 50 W |
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