MJ2501
TRANS PNP DARL 80V 10A TO3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics MJ2501 is a high-power PNP Darlington bipolar junction transistor designed for demanding applications. This component features an 80V collector-emitter breakdown voltage and a continuous collector current rating of 10A, with a maximum power dissipation of 150W. The device exhibits a substantial DC current gain (hFE) of at least 1000 at 5A and 3V. Its saturation voltage (Vce Sat) is specified at a maximum of 4V with a base current of 50mA driving a collector current of 10A. The MJ2501 utilizes a TO-3 (TO-204AA) package for robust chassis mounting and operation up to a junction temperature of 200°C. This transistor is well-suited for power switching, amplification, and voltage regulation circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Chassis Mount |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 50mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 150 W |
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