MD2009DFX
TRANS NPN 700V 10A TO3PFManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics NPN Bipolar Junction Transistor (BJT), part number MD2009DFX. This through-hole device features a 700V collector-emitter breakdown voltage and a maximum collector current of 10A. With a power dissipation of 58W, it is designed for demanding applications. Key electrical characteristics include a minimum DC current gain (hFE) of 5 at 5.5A and 5V, and a saturation voltage (Vce Sat) of 2.8V at 1.4A and 5.5A. The collector cutoff current is specified at a maximum of 200µA. Encased in a TO-3PF package, this transistor is suitable for use in industrial power supply and motor control applications. Operating temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 1.4A, 5.5A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3PF |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
| Power - Max | 58 W |
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