MD2009DFP
TRANS NPN 700V 10A TO220FPManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics MD2009DFP is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power switching applications. This device features a maximum collector-emitter breakdown voltage (Vce) of 700V and a continuous collector current capability (Ic) of 10A, with a maximum power dissipation of 40W. The TO-220 Full Pack package facilitates through-hole mounting for efficient thermal management. Key electrical specifications include a minimum DC current gain (hFE) of 5 at 5.5A and 5V, and a saturation voltage (Vce(sat)) of 2.8V at 1.4A and 5.5A. The collector cutoff current (Ic) is rated at a maximum of 200µA, and the device operates within a junction temperature range of 150°C. This component is commonly utilized in power supply units, lighting control, and motor drive systems within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 1.4A, 5.5A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 Full Pack |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
| Power - Max | 40 W |