MD1803DFX
TRANS NPN 700V 10A TO3PFManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics MD1803DFX is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power switching applications. Featuring a collector-emitter breakdown voltage of 700V and a continuous collector current capability of 10A, this device is suitable for demanding power supply designs, lighting control, and industrial motor drive systems. The MD1803DFX offers a maximum power dissipation of 57W and a junction temperature rating of 150°C, ensuring reliable operation under significant thermal loads. It is supplied in a TO-3PF package, facilitating through-hole mounting for efficient heat sinking. The transistor exhibits a minimum DC current gain (hFE) of 5.5 at 5A, 5V, and a collector-emitter saturation voltage of 2V at 1.25A, 5A, ensuring efficient switching performance. The collector cutoff current is rated at a maximum of 200µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.25A, 5A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5.5 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3PF |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
| Power - Max | 57 W |
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