HD1760JL
TRANS NPN 800V 36A TO264Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics HD1760JL is an NPN bipolar junction transistor (BJT) designed for high-voltage, high-current applications. This component features a maximum collector emitter breakdown voltage of 800 V and a continuous collector current rating of 36 A. With a maximum power dissipation of 200 W, it is suitable for demanding power switching and amplification tasks. The DC current gain (hFE) is specified at a minimum of 5 at 18 A collector current and 5 V collector emitter voltage. The saturation voltage (Vce Sat) is a maximum of 2 V at 4.5 A base current and 18 A collector current. The device is packaged in a TO-264 through-hole configuration and operates at junction temperatures up to 150°C. This transistor is commonly utilized in power supply units, motor control systems, and industrial power electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 4.5A, 18A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 18A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-264 |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 200 W |
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