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HD1750JL

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HD1750JL

TRANS NPN 800V 24A TO264

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics HD1750JL is an NPN Bipolar Junction Transistor (BJT) designed for high-voltage, high-current applications. This component features a maximum collector-emitter breakdown voltage of 800 V and a continuous collector current capability of 24 A, with a maximum power dissipation of 200 W. The TO-264 package with through-hole mounting facilitates integration into demanding power supply, motor control, and industrial automation systems. Key parameters include a minimum DC current gain (hFE) of 5.5 at 12A and 5V, and a maximum Vce(sat) of 3V at 3A and 12A. The operating junction temperature range extends to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 3A, 12A
Current - Collector Cutoff (Max)200µA
DC Current Gain (hFE) (Min) @ Ic, Vce5.5 @ 12A, 5V
Frequency - Transition-
Supplier Device PackageTO-264
Current - Collector (Ic) (Max)24 A
Voltage - Collector Emitter Breakdown (Max)800 V
Power - Max200 W

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