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ESM3030DV

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ESM3030DV

TRANS NPN DARL 300V 100A ISOTOP

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics ESM3030DV is a high-power NPN Darlington bipolar junction transistor. This component features a 300V collector-emitter breakdown voltage and a maximum collector current of 100A, with a typical DC current gain of 300 at 85A and 5V. The device dissipates up to 225W and has a Vce saturation of 1.5V at 2.4A/85A. Designed for chassis mounting within the SOT-227-4, miniBLOC package, it utilizes STMicroelectronics' ISOTOP® technology for enhanced thermal performance. This transistor is suitable for demanding applications across various industrial sectors, including power supplies and motor control. The operating junction temperature range extends to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 2.4A, 85A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 85A, 5V
Frequency - Transition-
Supplier Device PackageISOTOP®
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max225 W

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