ESM2012DV
TRANS NPN DARL 120V 120A ISOTOPManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics ESM2012DV is an NPN Darlington bipolar transistor designed for high-power switching and amplification applications. This device features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 120A, with a maximum power dissipation of 175W. The ESM2012DV exhibits a high DC current gain of 1200 minimum at 100A and 5V, and a Vce saturation of 1.5V maximum at 1A base current and 100A collector current. Its ISOTOP® package facilitates efficient thermal management and direct chassis mounting, making it suitable for demanding applications in industrial motor control, power supply regulation, and automotive electronic systems. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 100A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1200 @ 100A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | ISOTOP® |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 175 W |
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