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D44H11FP

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D44H11FP

TRANS NPN 80V 10A TO220FP

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics NPN Bipolar Junction Transistor (BJT), part number D44H11FP. This component offers an 80V collector-emitter breakdown voltage and a maximum continuous collector current of 10A, with a power dissipation of 36W. It features a minimum DC current gain (hFE) of 40 at 4A and 1V, and a Vce(sat) of 1V at 400mA and 8A. The collector cutoff current is rated at a maximum of 10µA. Designed with a TO-220FP full pack package, this through-hole mounted device operates at junction temperatures up to 150°C. It is commonly utilized in power switching and amplification applications across various industrial sectors, including automotive and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A, 1V
Frequency - Transition-
Supplier Device PackageTO-220FP
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max36 W

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