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BUV27

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BUV27

TRANS NPN 120V 12A TO220

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics BUV27 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding power applications. This component features a 120V collector-emitter breakdown voltage and a continuous collector current rating of 12A, with a maximum power dissipation of 85W. The BUV27 is housed in a standard TO-220-3 package, facilitating through-hole mounting. Its Vce saturation voltage is specified at 1.5V maximum at 800mA base current and 8A collector current. Operating temperatures reach up to 175°C (TJ), making it suitable for robust industrial and power management systems. The BUV27 is commonly utilized in power switching, linear voltage regulation, and general-purpose amplification circuits across various industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature175°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 800mA, 8A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max85 W

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