BUT30V
TRANS NPN 125V 100A ISOTOPManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BUT30V is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 125V collector-emitter breakdown voltage and a continuous collector current capability of 100A, with a maximum power dissipation of 250W. The BUT30V exhibits a minimum DC current gain (hFE) of 27 at 100A and 5V. It has a Vce saturation of 900mV at 10A collector current and 10A base current. This component is supplied in an ISOTOP package for efficient chassis mounting and thermal management, operating up to 150°C junction temperature. Its robust specifications make it suitable for use in power supplies, motor control, and industrial automation equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 10A, 100A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 27 @ 100A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | ISOTOP |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 125 V |
| Power - Max | 250 W |
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