BUT100
TRANS NPN 125V 50A TO3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BUT100 is an NPN Bipolar Junction Transistor (BJT) designed for high-power switching applications. This device features a 125V collector-emitter breakdown voltage (Vce max) and a continuous collector current capability of up to 50A. With a maximum power dissipation of 300W, the BUT100 is suitable for demanding power supply designs, motor control circuits, and industrial automation systems. The transistor's saturation voltage (Vce sat) is rated at 900mV at 10A collector current and 100A base current. It is housed in a TO-3 (TO-204AA) package, facilitating through-hole mounting and efficient thermal management up to an operating junction temperature of 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 10A, 100A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 125 V |
| Power - Max | 300 W |
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