BULT3P3
TRANS PNP 200V 3A SOT32-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BULT3P3 is a PNP Bipolar Junction Transistor (BJT) designed for robust power switching applications. This through-hole component boasts a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vce(max)) of 200 V. With a maximum power dissipation of 32 W and an operating junction temperature up to 150°C, it offers reliable performance in demanding environments. Key electrical specifications include a minimum DC current gain (hFE) of 10 at 10 mA and 5 V, and a Vce saturation of 500 mV at 200 mA and 1 A. The transistor is packaged in a SOT-32-3 (TO-225AA, TO-126-3) format, suitable for through-hole mounting. This device finds application in industrial power supplies, automotive electronics, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-32-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 32 W |
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