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BULT118M

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BULT118M

TRANS NPN 400V 2A SOT32-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics BULT118M is an NPN bipolar junction transistor (BJT) designed for high voltage applications. This through-hole component offers a collector-emitter breakdown voltage of 400V and supports a continuous collector current of up to 2A, with a maximum power dissipation of 45W. Key electrical characteristics include a minimum DC current gain (hFE) of 10 at 500mA and 5V, and a saturation voltage (Vce(sat)) of 1.5V at 400mA and 2A. The collector cutoff current (Icbo) is rated at a maximum of 250µA. The device operates at junction temperatures up to 150°C and is supplied in a SOT-32-3 package, also identified as TO-225AA or TO-126-3. This transistor finds application in power supply circuits, lighting control, and general-purpose switching in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 400mA, 2A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageSOT-32-3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max45 W

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