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BULK128D-B

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BULK128D-B

TRANS NPN 400V 4A SOT82-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics NPN Bipolar Junction Transistor (BJT), part number BULK128D-B, offers robust performance for demanding applications. This through-hole device is housed in a SOT-82-3 package, facilitating easy board assembly. It features a maximum collector current of 4A and a collector-emitter breakdown voltage of 400V. Dissipating up to 55W, this transistor exhibits a minimum DC current gain (hFE) of 8 at 2A and 5V. The saturation voltage (Vce Sat) is specified at a maximum of 1.5V with a base current of 500mA and collector current of 2.5A. Operating temperature range extends to 150°C (TJ). This component is suitable for use in power supply units and general purpose amplification.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-82
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 2A, 5V
Frequency - Transition-
Supplier Device PackageSOT-82-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max55 W

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