BULB7216T4
TRANS NPN 700V 3A D2PAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics NPN Bipolar Junction Transistor, part number BULB7216T4. This device features a 700V collector-emitter breakdown voltage and a 3A continuous collector current. With a maximum power dissipation of 80W and an operating junction temperature up to 150°C, it is suitable for demanding applications. The DC current gain (hFE) is a minimum of 4 at 2A collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 3V at 80mA base current and 800mA collector current. The collector cutoff current (Icbo) is specified at a maximum of 100µA. This component is housed in a TO-263-3, D2PAK surface-mount package and is supplied on tape and reel. The BULB7216T4 is utilized in power supply units and high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 800mA |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | D2PAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
| Power - Max | 80 W |
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