BULB49DT4
TRANS NPN 450V 5A D2PAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics NPN Bipolar Junction Transistor, part number BULB49DT4, offers robust performance for demanding applications. This device features a maximum collector-emitter breakdown voltage of 450V and a continuous collector current rating of 5A, with a maximum power dissipation of 80W. The minimum DC current gain (hFE) is specified at 4 at 7A and 10V. It exhibits a Vce saturation of 1.2V at 800mA and 4A. The component is housed in a surface-mount TO-263-3, D2PAK (2 Leads + Tab) package and is supplied on a tape and reel for automated assembly. Operating temperature range extends to 150°C (TJ). This transistor finds application in power switching and general-purpose amplification within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 800mA, 4A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4 @ 7A, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-263 (D2PAK) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Power - Max | 80 W |
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