BULB128-1
TRANS NPN 400V 4A TO262Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BULB128-1 is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This through-hole component features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce) of 400 V. The device offers a power dissipation of 70 W and a Vce(sat) of 500 mV at 1 A collector current and 4 A collector current. Its minimum DC current gain (hFE) is 14 at 2 A collector current and 5 V collector-emitter voltage. The BULB128-1 is housed in a TO-262 package and operates at junction temperatures up to 150°C. This transistor is commonly found in industrial power supplies, lighting controls, and motor drive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1A, 4A |
| Current - Collector Cutoff (Max) | 250µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-262 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 70 W |
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