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BUL810

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BUL810

TRANS NPN 450V 15A TO247-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics BUL810 is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding power applications. This device features a maximum collector-emitter breakdown voltage of 450V and a continuous collector current capability of 15A, with a maximum power dissipation of 125W. The BUL810 offers a minimum DC current gain (hFE) of 10 at 5A collector current and 5V collector-emitter voltage. Its saturation voltage (Vce(sat)) is specified at a maximum of 5V when driven by 2.4A base current and conducting 12A collector current. The transistor is housed in a TO-247-3 package, suitable for through-hole mounting, and operates reliably up to a junction temperature of 150°C. This component is commonly utilized in power switching circuits, motor control, and lighting applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic5V @ 2.4A, 12A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 5A, 5V
Frequency - Transition-
Supplier Device PackageTO-247-3
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)450 V
Power - Max125 W

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