BUL416T
TRANS NPN 800V 6A TO220Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BUL416T is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 800 V and a continuous collector current capability of 6 A. With a maximum power dissipation of 110 W, it is suitable for demanding power switching and amplification tasks. The transistor features a low saturation voltage of 1.5 V at 4 A collector current and 1.33 A base current. It exhibits a minimum DC current gain (hFE) of 18 at 700 mA collector current and 5 V collector-emitter voltage. The BUL416T is packaged in a TO-220 through-hole configuration, facilitating integration into various circuit designs. This device finds application in power supplies, lighting ballasts, and general-purpose high-voltage switching circuits. The operating junction temperature reaches up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.33A, 4A |
| Current - Collector Cutoff (Max) | 250µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 700mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 110 W |
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