Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BUL416

Banner
productimage

BUL416

TRANS NPN 800V 6A TO220

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics BUL416, an NPN bipolar junction transistor, offers robust performance with a 800 V collector-emitter breakdown voltage and a continuous collector current rating of 6 A. This device is designed for high-voltage applications, dissipating up to 110 W. Key parameters include a saturation voltage of 3V at 1.33A/4A and a minimum DC current gain (hFE) of 12 at 700mA/5V. The transistor features a collector cutoff current of 250µA and operates at a maximum junction temperature of 150°C. The BUL416 is housed in a TO-220-3 package for through-hole mounting. This component is suitable for use in power supply circuits and high-voltage switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 1.33A, 4A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce12 @ 700mA, 5V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)800 V
Power - Max110 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STBV42G

TRANS NPN 400V 1A TO92-3

product image
ST901T

TRANS NPN DARL 350V 4A TO220

product image
ST13003D-K

TRANS NPN 400V 1.5A SOT32-3