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BUL3N7

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BUL3N7

TRANS NPN 400V 3A TO220

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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The STMicroelectronics BUL3N7 is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power switching applications. This through-hole component, housed in the standard TO-220 package, offers a collector-emitter breakdown voltage of 400V and a continuous collector current capability of up to 3A. With a maximum power dissipation of 60W, it is suitable for demanding environments. Key electrical characteristics include a minimum DC current gain (hFE) of 18 at 700mA and 5V, and a saturation voltage (Vce(sat)) of 500mV at 200mA and 1A. The maximum collector cutoff current is rated at 100µA, with an operating junction temperature up to 150°C. This device finds application in power supplies, lighting ballasts, and general industrial power control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce18 @ 700mA, 5V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max60 W

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