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BUL213

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BUL213

TRANS NPN 600V 3A TO220

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics BUL213 is a robust NPN bipolar junction transistor designed for high-voltage applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 3A, with a maximum power dissipation of 60W. The BUL213 offers a minimum DC current gain (hFE) of 16 at 350mA and 3V, and a saturation voltage (Vce(sat)) of 900mV at 1A collector current. It is housed in a standard TO-220-3 package for through-hole mounting, enabling efficient heat dissipation. This transistor is commonly employed in power supply switching, line output stages, and general-purpose high-voltage amplification. The device operates at junction temperatures up to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic900mV @ 200mA, 1A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce16 @ 350mA, 3V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max60 W

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