BUL1403ED
TRANS NPN 650V 3A TO220Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BUL1403ED is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power applications. This device features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 3A, with a maximum power dissipation of 80W. The transistor exhibits a minimum DC current gain (hFE) of 15 at 400mA collector current and 3V Vce. Saturation voltage is specified at a maximum of 2.5V for a 50mA base current driving a 500mA collector current. The BUL1403ED is packaged in a standard TO-220-3 through-hole configuration, suitable for board mounting. Its high voltage and current handling make it a suitable component for power supplies, lighting control, and motor drive circuits across various industrial and consumer electronics sectors. The part is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 400mA, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 80 W |
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