Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BU931T

Banner
productimage

BU931T

TRANS NPN DARL 400V 10A TO220

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

The STMicroelectronics BU931T is an NPN Darlington bipolar junction transistor designed for high-voltage and high-current applications. This component features a collector-emitter breakdown voltage of 400 V and a maximum continuous collector current of 10 A. With a power dissipation capability of 125 W and a junction temperature rating of 175°C, it is suitable for demanding thermal environments. The BU931T offers a minimum DC current gain (hFE) of 300 at 5A collector current and 10V collector-emitter voltage. Its saturation voltage (Vce Sat) is a maximum of 1.8V at 250mA base current and 10A collector current. This device is presented in a TO-220-3 through-hole package, facilitating robust mounting. The BU931T is qualified to AEC-Q101 standards, indicating its suitability for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature175°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 250mA, 10A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 5A, 10V
Frequency - Transition-
Supplier Device PackageTO-220
GradeAutomotive
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max125 W
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
191-66007G

LASER DIODE ROD LENS 5X8.5

product image
CLM-635-01 LPO

CONCENTRICITY LASER MODULE

product image
CLM-635-02 LPT

CONCENTRICITY LASER MODULE