BU900TP
TRANS NPN 370V 5A SOT82-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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The STMicroelectronics BU900TP is a high-voltage NPN bipolar junction transistor (BJT) configured as a Trilinton with integrated Zener clamp protection. This device features a maximum collector-emitter breakdown voltage (Vce) of 370V and a continuous collector current (Ic) capability of 5A, with a maximum power dissipation of 55W. The BU900TP exhibits a minimum DC current gain (hFE) of 7000 at 1A, 5V, and a Vce(sat) of 4V at 3mA, 3A. It is supplied in a SOT-82-3 through-hole package. This component is commonly utilized in power supply applications, lighting controls, and motor drive circuits. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-82 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Trilinton, Zener Clamp |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 3mA, 3A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 7000 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-82-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 370 V |
| Power - Max | 55 W |
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