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BF420-AP

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BF420-AP

TRANS NPN 300V 0.5A TO92-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics BF420-AP is a bipolar junction transistor (BJT) featuring an NPN configuration. This component is rated for a collector-emitter breakdown voltage of 300V and a continuous collector current of up to 500mA. It exhibits a transition frequency of 60MHz and a maximum power dissipation of 830mW. The DC current gain (hFE) is a minimum of 50 at 25mA collector current and 20V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 600mV at 5mA base current and 30mA collector current. This device is supplied in a TO-92-3 package, suitable for through-hole mounting, and is presented in Tape & Box packaging. The BF420-AP is utilized in various industrial applications requiring high voltage switching and amplification.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 30mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA, 20V
Frequency - Transition60MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max830 mW

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