BD711
TRANS NPN 100V 12A TO220Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BD711 NPN Bipolar Junction Transistor (BJT) designed for demanding power applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 12A, with a maximum power dissipation of 75W. The BD711 offers a transition frequency of 3MHz and a minimum DC current gain (hFE) of 15 at 4A collector current and 4V Vce. It is packaged in a standard TO-220-3 through-hole configuration, suitable for robust thermal management. The Vce saturation voltage is specified as 1V maximum at 400mA base current and 4A collector current. This device finds application in power supply regulation, switching circuits, and general-purpose amplification within industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 4A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 75 W |
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