BD537
TRANS NPN 80V 8A TO220Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BD537 is an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This TO-220 packaged device offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 8A. With a maximum power dissipation of 50W and a minimum DC current gain (hFE) of 15 at 2A and 2V, the BD537 is suitable for general-purpose amplification and high-current switching tasks. Its saturation voltage (Vce Sat) is rated at a maximum of 800mV at 600mA collector current and 6A collector current, ensuring efficient operation under load. The transistor's operating temperature range extends to 150°C (TJ). This component finds utility in industrial power supplies, automotive electronics, and consumer audio equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 50 W |
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