BD536
TRANS PNP 60V 8A TO220Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BD536 PNP Bipolar Junction Transistor (BJT) for robust power switching applications. This through-hole component, housed in a TO-220-3 package, offers a maximum collector current of 8A and a collector-emitter breakdown voltage of 60V. With a power dissipation capability of 50W and a minimum DC current gain (hFE) of 25 at 2A and 2V, the BD536 is well-suited for general-purpose amplification and switching tasks. Key parameters include a saturation voltage (Vce Sat) of 800mV at 600mA collector current and 6A, and a collector cutoff current of 100µA. The operating temperature range extends to 150°C (TJ). This device finds application in industrial automation, power supplies, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 50 W |
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