BD135-16
TRANS NPN 45V 1.5A SOT32Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BD135-16 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This through-hole component, packaged in a SOT-32 (TO-225AA) case, offers a maximum collector current (Ic) of 1.5 A and a collector-emitter breakdown voltage (Vce) of 45 V. It features a maximum power dissipation of 1.25 W and an operating junction temperature up to 150°C. The DC current gain (hFE) is a minimum of 40 at 150mA collector current and 2V Vce. Saturation voltage (Vce Sat) is specified at 500mV with a base current of 50mA and collector current of 500mA. The collector cutoff current (Icbo) is a maximum of 100nA. Typical applications include power supply circuits, audio amplifiers, and general electronic control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-32 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1.25 W |