Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BCY59X

Banner
productimage

BCY59X

TRANS NPN 45V 0.2A TO18

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics BCY59X is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector current (Ic) of 200 mA and a collector-emitter breakdown voltage (Vce(max)) of 45 V. The transition frequency (fT) is specified at 200 MHz, with a minimum DC current gain (hFE) of 180 at 2 mA collector current and 5 V collector-emitter voltage. The maximum power dissipation is 390 mW, suitable for operation up to a junction temperature of 175°C. The BCY59X is housed in a TO-18 metal can package, also known as TO-206AA. This device is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature175°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-18
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max390 mW

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STBV42G

TRANS NPN 400V 1A TO92-3

product image
BUL39D

TRANS NPN 450V 4A TO220

product image
BD241A-A

TRANS NPN 60V 3A TO220