BCY59VIII
TRANS NPN 45V 0.2A TO18Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BCY59VIII is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 45V and a continuous collector current (Ic) capability of 200mA, this device offers a transition frequency (fT) of 200MHz. The BCY59VIII is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. It exhibits a minimum DC current gain (hFE) of 180 at 2mA and 5V, with a maximum collector-emitter saturation voltage (Vce(sat)) of 700mV at 2.5mA and 100mA. The maximum power dissipation is 390mW, and it operates efficiently across a wide temperature range, up to 175°C (TJ). This component finds application in industrial control systems and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 2.5mA, 100mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-18 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 390 mW |
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