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BCY59IX

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BCY59IX

TRANS NPN 45V 0.2A TO18

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics BCY59IX is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This TO-18 packaged device features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 200mA. The BCY59IX exhibits a transition frequency of 200MHz and a maximum power dissipation of 390mW. Key specifications include a minimum DC current gain (hFE) of 180 at 2mA collector current and 5V collector-emitter voltage, and a Vce(sat) of 700mV at 2.5mA base current and 100mA collector current. The transistor operates efficiently across a wide temperature range, up to 175°C (TJ). This component is suitable for use in industrial automation, consumer electronics, and telecommunications equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature175°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-18
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max390 mW

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