BC107
TRANS NPN 45V 0.1A TO18Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics BC107 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage (Vce) of 45V, this device is specified with a continuous collector current (Ic) of up to 100mA and a maximum power dissipation of 300mW. The DC current gain (hFE) is rated at a minimum of 110 at 2mA collector current and 5V Vce. The transistor exhibits a collector cutoff current (Icbo) of 15nA. Saturation voltage (Vce(sat)) is specified at a maximum of 600mV for a collector current of 100mA driven by 5mA base current. The BC107 is housed in a TO-18 metal can package, suitable for through-hole mounting. This component finds application in consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 300 mW |
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